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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF19085/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. * Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power -- 18 Watts Avg. Power Gain -- 13.0 dB Efficiency -- 23% ACPR -- - 51 dB IM3 -- - 36.5 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature
N - Channel Enhancement - Mode Lateral MOSFETs
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
1990 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465 - 06, STYLE 1 NI - 780 MRF19085R3,MRF19085LR3
CASE 465A - 06, STYLE 1 NI - 780S MRF19085SR3, MRF19085LSR3 Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 273 1.56 - 65 to +150 200 Unit Vdc Vdc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (1) 0.79 Unit C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
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MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 850 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 2.5 -- -- -- 3.5 0.18 6 4 4.5 0.210 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 10 1 Vdc Adc Adc Symbol Min Typ Max Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
--
3.6
--
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured over 1.2288 MHz bandwidth @ f1 - 2.5 MHz and f2 = +2.5 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR measured over 30 kHz bandwidth @ f1 - 885 MHz and f2 =+885 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 850 mA, f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. Gps 12 13 -- dB
21
23
--
%
IMD
--
- 36.5
- 35
dBc
ACPR
--
- 51
- 48
dBc
IRL
--
- 12
-9
dB
No Degradation In Output Power Before and After Test
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 2
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ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Gps -- 13 -- dB Symbol Min Typ Max Unit
--
36
--
%
IMD
--
- 31
--
dBc
IRL
--
- 12
--
dB
Freescale Semiconductor, Inc...
Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 850 mA, f = 1990 MHz)
P1dB
--
90
--
W
MOTOROLA RF DEVICE DATA
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MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 3
Freescale Semiconductor, Inc.
VGG R1 R3 B1 + C5 C4 C3 C2 C7 + C8 L1 C9 C10 + C11 + C12 VDD
R2
Z4 RF INPUT
Z9 RF OUTPUT
Z1 C1
Z2
Z3 DUT
Z5
Z6
Z7 C6
Z8
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Figure 1. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Schematic
Table 1. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Designations and Values
Part B1 C1 C2, C7 C3, C9 C4, C10 C5 C6 C8 C11, C12 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Board PCB Description Short Ferrite Bead 51 pF Chip Capacitor 5.1 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 F Chip Capacitors 0.1 F Tantalum Surface Mount Capacitor 10 pF Chip Capacitor 10 F Tantalum Surface Mount Capacitor 22 F Tantalum Surface Mount Capacitors 1 Turn, 20 AWG, 0.100 ID Type N Flange Mounts 1.0 k, 1/8 W Chip Resistor 220 k, 1/8 W Chip Resistor 10 , 1/8 W Chip Resistor Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip 0.030 Glass Teflon Etched Circuit Boards 0.750 x 0.0840 1.090 x 0.0840 0.400 x 1.400 0.520 x 0.050 0.540 x 1.133 0.400 x 0.140 0.555 x 0.0840 0.720 x 0.0840 0.560 x 0.070 GX-0300-55-22, r = 2.55 MRF19085 Rev. 4 Keene CMR 3052-1648-10 Value, P/N or DWG 2743019447 100B510JCA500X 100B5R1JCA500X 100B102JCA500X CDR33BX104AKWS T491C105M050 100B100JCA500X T495X106K035AS4394 T491X226K035AS4394 ATC ATC ATC Kemet Kemet ATC Kemet Kemet Motorola Omni Spectra Manufacturer Fair Rite
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 4
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C8 C2 R1 B1 C7 L1 C9 R2 CUT OUT AREA C5 C4 C3 C11 C12 C6 R3 C10
C1
MRF19085 Rev.4
Freescale Semiconductor, Inc...
Figure 2. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 5
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TYPICAL CHARACTERISTICS
0 -10 -20 (dBc) -30 -40 -50 -60 -IM3 @ 1.2288 MHz BW -3.75 -2.50 -1.25 0.00 1.25 +IM3 @ 1.2288 MHz BW 2.50 3.75 5.00 -ACPR @ 30 kHz BW , DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) f1 1.2288 MHz BW f2 1.2288 MHz BW 30 25 20 IM3 15 10 5 ACPR 0 0.5 1 10 Pout, OUTPUT POWER (WATTS Avg.) N-CDMA 30 -70 G ps -49 -56 -63 VDD = 26 Vdc, IDQ = 850 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability (CCDF) -28 -35 -42 IM3 (dBc), ACPR (dBc) , DRAIN EFFICIENCY (%)
+ACPR @ 30 kHz BW
-70 -5.00
Freescale Semiconductor, Inc...
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Spectrum
Figure 4. 2-Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
50 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) -20 -25 -30 -35 -40 -45 -50 850 mA -55 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 IDQ = 550 mA 700 mA 1150 mA 1000 mA VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
-20 VDD = 26 Vdc IDQ = 850 mA f1 = 1960 MHz 100 kHz Tone Spacing -50 3rd Order 5th Order -60 7th Order -70 4 10 Pout, OUTPUT POWER (WATTS) PEP
-40
30
20
10
0 100
Figure 5. Intermodulation Distortion Products versus Output Power
IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 24 22 20 18 16 14 12 1930 1940 1950 1960 1970 f, FREQUENCY (MHz) VDD = 26 V Pout = 18 W Avg. IDQ = 850 mA IM3 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability) (CCDF) -40 ACPR G ps 1980 -50 -60 1990 IRL -10 -20 -30 0 P in , INPUT POWER (WATTS), G ps , POWER GAIN (dB) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 14 12 10 8 6
, DRAIN EFFICIENCY (%)
-30
40
Figure 6. Third Order Intermodulation Distortion versus Output Power and IDQ
54 G ps VDD = 26 V IDQ = 850 mA f = 1960 MHz 47 40 33 26 4 2 0 2 10 Pout, OUTPUT POWER (WATTS) P in 19 12 5 100 140
Figure 7. 2-Carrier N-CDMA Broadband Performance
Figure 8. CW Performance
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 6
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TYPICAL CHARACTERISTICS
39 38 , DRAIN EFFICIENCY (%) 37 IMD 36 35 34 33 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 VDD, DRAIN SUPPLY (V) -29 -30 -31 -32 28.0 IDQ = 850 mA f = 1960 MHz 100 kHz Tone Spacing -26 -27 -28 IMD, INTERMODULATION DISTORTION (dBc) 14.0 IDQ = 1150 mA G ps , POWER GAIN (dB) 13.5 1000 mA 850 mA 13.0 700 mA
12.5 550 mA 12.0 VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 4 10 Pout, OUTPUT POWER (WATTS) 100
11.5
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Figure 9. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply
Figure 10. Two-Tone Power Gain versus Output Power
G ps , POWER GAIN (dB),, DRAIN EFFICIENCY (%)
35 30 25 20 15 10 1920 1930 1940 1950 VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 850 mA 100 kHz Tone Spacing IMD Gps 1960 1970 1980 1990 IRL -10 -15 -20 -25 -30 -35 2000
f, FREQUENCY (MHz)
Figure 11. Two-Tone Broadband Performance
MOTOROLA RF DEVICE DATA
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MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 7
IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc)
40
-5
Freescale Semiconductor, Inc.
f = 1990 MHz
Zload f = 1930 MHz
Zo = 5
Freescale Semiconductor, Inc...
f = 1990 MHz Zsource f = 1930 MHz
VDD = 26 V, IDQ = 850 mA, Pout = 18 W Avg. f MHz 1930 1960 1990 Zsource 0.75 - j2.50 0.70 - j2.40 0.65 - j2.35 Zload 1.05 - j1.95 1.10 - j1.85 1.05 - j1.75
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 12. Series Equivalent Input and Output Impedance MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 8
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NOTES
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MOTOROLA RF DEVICE DATA
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MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 9
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NOTES
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MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 10
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PACKAGE DIMENSIONS
B G
1
2X
Q bbb
M
TA
M
B
M
3 (FLANGE)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
Freescale Semiconductor, Inc...
H
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE F NI - 780 MRF19085R3, MRF19085LR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
(FLANGE)
B
2
2X
K
D bbb
M
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE F NI - 780S MRF19085SR3, MRF19085LSR3
MOTOROLA RF DEVICE DATA
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MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 11
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Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
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